The electronic structure of CuCl

被引：13

作者：

Ferhat, M ^{[1
]}

Bouhafs, B

Aourag, H

Zaoui, A

Certier, M

机构：

[1] USTO, Inst Tronc Commun, Phys Lab, Oran 31000, Algeria

[2] Univ Djillali Liabes Sidi Bel Abbes, Dept Phys, Computat Mat Sci Lab, Sidi Bel 22000, Abbes, Algeria

[3] LSOM, IUT Measures Phys, F-57078 Metz, France

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2001年 / 20卷 / 02期

关键词：

D O I：

10.1016/S0927-0256(00)00181-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a systematic study of the electronic properties of zinc-blende CuCl. The band structure, valence and conduction effective mass, density of states (DOS) and charges densities are calculated using the local density all-electron full-potential linearized augmented plane wave (FLAPW) method. Our results are in agreement with a host of theoretical and experimental data yielding a consistent description of electronic properties of this class of technologically important semiconductor compounds. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：267 / 274

页数：8

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