Broadband infrared emission from Er-Tm:Al2O3 thin films -: art. no. 111103

Thin films of amorphous aluminum oxide (Al2O3) co-doped with Er3+ and Tm3+ have been synthesized by alternate pulsed laser deposition. When pumped at 794 nm a broad emission band over 1400-1700 nm is observed. Two peaks related to the 1540 nm band from Er3+ and to the 1640 nm band from Tm3+ are clearly distinguished. The photoluminescence intensity ratio of the 1640-1540 nm emissions has been controlled by modifying the Tm concentration. A spectrum with a fairly flat profile and a full width at half maximum of 230 nm is obtained for an Er concentration of 7.2x10(19) cm(-3) and a [Tm]/[Er] concentration ratio of 3. It is found that the Er3+ to Tm3+ energy transfer processes play an important role in the definition of the luminescent response. The large width of the emission band and the excellent optical and thermomechanical properties of the Er-Tm co-doped Al2O3 signal this system as a potential candidate for the development of broadband integrated optical amplifiers. (c) 2005 American Institute of Physics.