Efficiency enhancement of amorphous silicon p-i-n solar cells by LP-CVD ZnO

被引：38

作者：

Meier, J ^{[1
]}

Kroll, U ^{[1
]}

Dubail, S ^{[1
]}

Golay, S ^{[1
]}

Fay, S ^{[1
]}

Dubail, J ^{[1
]}

Shah, A ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915991

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Amorphous silicon p-i-n solar cells were deposited on "in house" developed LP-CVD zinc oxide and compared with commercially available SnO2 (Asahi type U2) substrates. While for both front TCO materials comparably high values of the open circuit voltage (860-900 mV) and of the fill factor (72 - 74 %) were obtained, a remarkable enhancement of the short-circuit current density could be observed for LP-CVD ZnO substrates. Optical characterizations confirm for LP-CVD ZnO a more efficient light-trapping effect, as compared to SnO2. By applying this low-cost LP-CVD ZnO, a stabilized a-Si:H p-i-n solar cell efficiency of 9 % has been achieved.

引用

页码：746 / 749

页数：4

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