PdGeSbTe alloy for phase change optical recording

Phase change optical recording disks using a Pd-Ge-Sb-Te quaternary alloy demonstrated high crystallization speed and long-term thermal stability of the amorphous recording marks. This alloy film can be crystallized by a short duration laser pulse of less than 100 ns. It is applicable to a single beam overwrite optical recording system. The crystallized portion of this recording layer on the disk is assigned to single phase and polycrystalline face-centered-cubic (fcc) crystals by transmission electron diffraction. A small amount of Pd atoms (typically 0.2 to 3 at.%) in this alloy improve the thermal stability of amorphous marks.