Wet oxidation of Ti34Si23B43

被引：18

作者：

Kacsich, T ^{[1
]}

Gasser, S ^{[1
]}

Tsuji, Y ^{[1
]}

Dommann, A ^{[1
]}

Nicolet, MA ^{[1
]}

Nicolet, A ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.369342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The wet oxidation of magnetron-sputtered x-ray-amorphous Ti34Si23N43 films at temperatures from 500 to 1000 degrees C and ambient pressure was investigated by backscattering spectrometry, x-ray diffraction analysis, and step profilometry. Up to 800 degrees C, the oxidation yields x-ray-amorphous oxide scales of atomic composition Ti20Si13O67. At 500 and 550 degrees C the oxide growth kinetics is parabolic. At 700 and 800 degrees C, the oxidation kinetics is well described by a logarithmic time dependence. At 1000 degrees C, the oxide scale has a layered structure with a crystalline TiO2 layer on top of Ti-Si-O. (C) 1999 American Institute of Physics. [S0021-8979(99)00503-4].

引用

页码：1871 / 1875

页数：5

共 29 条

[1] Evaluation of hard TiN coatings by depth sensing indentation and scratch testing methods [J].