High-resolution shadow-mask patterning in deep holes and its application to an electrical wafer feed-through

被引：44

作者：

Burger, GJ ^{[1
]}

Smulders, EJT ^{[1
]}

Berenschot, JW ^{[1
]}

Lammerink, TSJ ^{[1
]}

Fluitman, JHJ ^{[1
]}

Imai, S ^{[1
]}

机构：

[1] HITACHI LTD,MECH ENGN RES LAB,TSUCHIURA,IBARAKI 300,JAPAN

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1996年 / 54卷 / 1-3期

关键词：

shadow masks; feed-throughs; patterning; contacting; micromachining;

D O I：

10.1016/S0924-4247(97)80035-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a technique to pattern materials in deep holes and/or on non-planar substrate surfaces. A rather old technique, namely, electron-beam evaporation of metals through a shadow mask, is used. The realization of high-resolution shadow masks using micromachining techniques is described. Further, a low ohmic electrical wafer feed-through with a small parasitic capacitance to the substrate and a high placing density is presented.

引用

页码：669 / 673

页数：5