Thermodynamics of phosphorus in molten silicon

被引:114
作者
Miki, T
Morita, K
Sano, N
机构
[1] Department of Metallurgy, University of Tokyo
来源
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE | 1996年 / 27卷 / 06期
关键词
D O I
10.1007/s11663-996-0007-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Removal of phosphorus is one of the major problems on the purification of molten silicon for solar cell. The Gibbs energy change of phosphorus dissolution into molten silicon was determined in the temperature range from 1723 to 1848 K by equilibrating a molten silicon-phosphorus alloy in a controlled phosphorus partial pressure and is expressed by the following equations. 1/2 P-2 (g) = (P) under bar (mass pct, in Si) Delta G degrees = -139,000 (+/- 2000) + 43.4 (+/- 10.1 T) (J/mol) The possibility of removing phosphorus from silicon melts by vacuum treatment and the accompanying yield of silicon during the refining process are discussed.
引用
收藏
页码:937 / 941
页数:5
相关论文
共 8 条
[1]  
[Anonymous], 1980, PHYS CHEM HIGH TEMPE
[2]  
Ban-Ya S., 1975, TETSU TO HAGANE, V61, P2933
[3]  
Chase Jr M.W., 1985, J PHYS CHEM REF DATA, V14, P1735
[4]   PURIFICATION OF METALLURGICAL SILICON FOR SOLAR-GRADE SILICON BY ELECTRON-BEAM BUTTON MELTING [J].
IKEDA, T ;
MAEDA, M .
ISIJ INTERNATIONAL, 1992, 32 (05) :635-642
[5]  
*JAP SOC PROM SCI, 1988, STEELM DAT SOURCB, P35
[6]  
LUCAS LD, 1962, CR HEBD ACAD SCI, V255, P2414
[7]  
Oletee M., 1960, MEM ETUD SCI REV MET, V57, P467
[8]   GASEOUS REMOVAL OF PHOSPHORUS AND BORON FROM MOLTEN SILICON [J].
SUZUKI, K ;
SAKAGUCHI, K ;
NAKAGIRI, T ;
SANO, N .
JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1990, 54 (02) :161-167