Electronic states origin of field emission of silicon clusters

被引：4

作者：

Araidai, M

Yamauchi, A

Watanabe, K

机构：

[1] Tokyo Univ Sci, Fac Sci, Dept Phys, Shinjuku Ku, Tokyo 1628601, Japan

[2] CREST, Japan Sci & Technol Corp, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 10期

关键词：

ab initio calculation; field emission; atomic clusters; electronic states; time-dependent density-functional theory;

D O I：

10.1143/JJAP.42.6502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic states origin of the field emission of silicon clusters as a model system of covalent-bond nanostructures is elucidated by time-dependent density-functional calculations. The local electronic properties, sigma- or pi-bonding states of silicon clusters, are crucial for understanding the field emission characteristics. The findings in this study provide a theoretical basis for understanding and designing Si- and C-based nanostructured field emitters.

引用

收藏

页码：6502 / 6503

页数：2

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