Explicit formulation of a series resistance correction procedure for MOSFET parameter extraction and its accuracy analysis

被引:2
作者
Niu, GF [1 ]
Cressler, JD [1 ]
Mathew, SJ [1 ]
机构
[1] Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
关键词
D O I
10.1016/S0038-1101(97)00270-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:1057 / 1058
页数:2
相关论文
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[3]   A NEW SHIFT AND RATIO METHOD FOR MOSFET CHANNEL-LENGTH EXTRACTION [J].
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