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Explicit formulation of a series resistance correction procedure for MOSFET parameter extraction and its accuracy analysis
被引:2
作者
:
Niu, GF
论文数:
0
引用数:
0
h-index:
0
机构:
Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
Niu, GF
[
1
]
Cressler, JD
论文数:
0
引用数:
0
h-index:
0
机构:
Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
Cressler, JD
[
1
]
Mathew, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
Mathew, SJ
[
1
]
机构
:
[1]
Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
来源
:
SOLID-STATE ELECTRONICS
|
1998年
/ 42卷
/ 06期
关键词
:
D O I
:
10.1016/S0038-1101(97)00270-0
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:1057 / 1058
页数:2
相关论文
共 3 条
[1]
Arora N., 1993, MOSFET MODELS VLSI C
[2]
Impact of the series resistance on the parameter extraction of submicron silicon metal-oxide-semiconductor transistors operated at 77 K
[J].
Simoen, E
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC, Kapeldreef 75
Simoen, E
;
Claeys, C
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC, Kapeldreef 75
Claeys, C
.
SOLID-STATE ELECTRONICS,
1997,
41
(04)
:659
-661
[3]
A NEW SHIFT AND RATIO METHOD FOR MOSFET CHANNEL-LENGTH EXTRACTION
[J].
TAUR, Y
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
TAUR, Y
;
ZICHERMAN, DS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
ZICHERMAN, DS
;
LOMBARDI, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
LOMBARDI, DR
;
RESTLE, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
RESTLE, PJ
;
HSU, CH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
HSU, CH
;
HANAFI, HI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
HANAFI, HI
;
WORDEMAN, MR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
WORDEMAN, MR
;
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DAVARI, B
;
SHAHIDI, GG
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
SHAHIDI, GG
.
IEEE ELECTRON DEVICE LETTERS,
1992,
13
(05)
:267
-269
←
1
→
共 3 条
[1]
Arora N., 1993, MOSFET MODELS VLSI C
[2]
Impact of the series resistance on the parameter extraction of submicron silicon metal-oxide-semiconductor transistors operated at 77 K
[J].
Simoen, E
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC, Kapeldreef 75
Simoen, E
;
Claeys, C
论文数:
0
引用数:
0
h-index:
0
机构:
IMEC, Kapeldreef 75
Claeys, C
.
SOLID-STATE ELECTRONICS,
1997,
41
(04)
:659
-661
[3]
A NEW SHIFT AND RATIO METHOD FOR MOSFET CHANNEL-LENGTH EXTRACTION
[J].
TAUR, Y
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
TAUR, Y
;
ZICHERMAN, DS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
ZICHERMAN, DS
;
LOMBARDI, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
LOMBARDI, DR
;
RESTLE, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
RESTLE, PJ
;
HSU, CH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
HSU, CH
;
HANAFI, HI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
HANAFI, HI
;
WORDEMAN, MR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
WORDEMAN, MR
;
DAVARI, B
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DAVARI, B
;
SHAHIDI, GG
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
SHAHIDI, GG
.
IEEE ELECTRON DEVICE LETTERS,
1992,
13
(05)
:267
-269
←
1
→