Effects of alumina and hydrogen peroxide on the chemical-mechanical polishing of aluminum in phosphoric acid base slurry

被引：37

作者：

Kuo, HS ^{[1
]}

Tsai, WT ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2001年 / 69卷 / 1-3期

关键词：

chemical-mechanical polishing; aluminum; alumina; phosphoric acid; hydrogen peroxide; passivation;

D O I：

10.1016/S0254-0584(00)00299-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrochemical behavior of aluminum in phosphoric acid base slurry was investigated under chemical-mechanical polishing (CMP) condition. The effect of alumina and hydrogen peroxide concentration on the CMP metal removal rate was evaluated. The experimental results from potentiodynamic polarization curve measurements indicated that a particle content in the range of 1-15 wt.% greatly modified the electrochemical behavior by decreasing the corrosion potential and increasing the passive current density. The results of electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) examinations showed that the passivation behavior of Al in the testing slurry was affected by hydrogen peroxide. The CMP removal rate was also a strong function of hydrogen peroxide concentration in the phosphoric acid base slurry. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：53 / 61

页数：9

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