Charge carrier transport in poly(methylphenyl silylene):: The effect of additives

被引:31
作者
Nespurek, S
Valerián, H
Eckhardt, A
Herden, V
Schnabel, W
机构
[1] Acad Sci Czech Republ, Inst Macromol Chem, CR-16206 Prague 6, Czech Republic
[2] Tech Univ, Fac Chem, Brno 61200, Czech Republic
[3] Hahn Meitner Inst Berlin GmbH, Bereich Phys Chem, D-14109 Berlin, Germany
关键词
charge carrier transport; polaron; transport electronic states; charge carrier hopping; disordered transport; poly[methyl(phenyl)silylene; poly[biphenyl-4-yl(methyl)silylene;
D O I
10.1002/pat.70
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Poly[methyl(phenyl)silylene], PMPSi, was doped with compounds of the electron acceptor type. The charge carrier mobility increases with increasing electron affinity of the accepters having zero dipole moments. At the same time the energy distribution of hopping states narrows. On the other hand, the hole drift mobility is influenced by the dipole moment of the dopand. The electrostatic charge carrier-dipole interaction causes a broadening of the energy distribution of transport states which results in a decrease in the charge carrier mobility. The charge carrier transport can be explained by the disordered polaronic theory, according to which the activation energy of charge carrier mobility has contributions based on the dynamic disorder, i.e. the polaronic barrier, and on the static disorder, i.e. the variation of the energy of transport stales as a result of the environment. Copyright (C) 2001 John Wiley & Sons, Ltd.
引用
收藏
页码:306 / 318
页数:13
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