Auger electron spectroscopy, ellipsometry and photoluminescence investigations of Zn1-xBexSe alloys

被引:7
作者
Bukaluk, A
Wronkowska, AA
Wronkowski, A
Arwin, H
Firszt, F
Legowski, S
Meczynska, H
机构
[1] Akad Tech Rolnicza, Inst Matemat & Fizyki, PL-85796 Bydgoszcz, Poland
[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
[3] Uniwersytet Mikolaja Kopernika, Inst Fizyki, PL-87100 Torun, Poland
关键词
II-VI semiconductors; chalcogenides; photoluminescence; ellipsometry; Auger electron spectroscopy;
D O I
10.1016/S0169-4332(01)00108-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this paper, properties of the Zn1-xBexSe crystals grown from the melt by the high-pressure Bridgman method are reported. Spectroscopic ellipsometry has been used for determination of the complex dielectric function of Zn1-xBexSe. On the basis of the photon energy dependence of the dielectric function, the energy gaps of alloys containing different beryllium concentrations have been evaluated. Measurements of the photoluminescence (PL) spectra allowed to find the excitonic gap in the investigated alloys. Auger electron spectroscopy (AES) with simultaneous argon ion sputtering has been used for determination of surface composition. AES investigations allowed to make predictions concerning distribution of particular elements in the samples. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:531 / 537
页数:7
相关论文
共 27 条
[1]  
ADACHI S, 1970, PHYS REV B, V43, P9559
[2]   LINE-SHAPE ANALYSIS OF ELLIPSOMETRIC SPECTRA ON THIN ORGANIC FILMS [J].
ARWIN, H ;
MARTENSSON, J ;
JANSSON, R .
APPLIED OPTICS, 1992, 31 (31) :6707-6715
[3]  
ASPNES DE, 1980, HDB SEMICONDUCTORS, V2, P123
[4]  
AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P274
[5]   Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates [J].
Bousquet, V ;
Tournie, E ;
Laugt, M ;
Vennegues, P ;
Faurie, JP .
APPLIED PHYSICS LETTERS, 1997, 70 (26) :3564-3566
[6]   New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys [J].
Chauvet, C ;
Bousquet, V ;
Tournié, E ;
Faurie, JP .
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (06) :662-665
[7]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[8]   Growth and characterization of beryllium-based II-VI compounds [J].
Cho, MW ;
Chang, JH ;
Bagnall, DM ;
Koh, KW ;
Saeki, S ;
Park, KT ;
Zhu, Z ;
Hiraga, K ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :512-517
[9]   ROLE OF COULOMB-CORRELATED ELECTRON-HOLE PAIRS IN ZNSE-BASED QUANTUM-WELL DIODE-LASERS [J].
DING, J ;
HAGEROTT, M ;
KELKAR, P ;
NURMIKKO, AV ;
GRILLO, DC ;
HE, L ;
HAN, J ;
GUNSHOR, RL .
PHYSICAL REVIEW B, 1994, 50 (08) :5787-5790
[10]  
FAURIE JP, 1999, P 8 INT C 2 6 COMP 2, P77