Influence of oxygen partial pressure on the optical properties of electron beam evaporated vanadium pentoxide thin films

Vanadium pentoxide thin films were prepared using the electron beam evaporation technique at different oxygen partial pressures keeping the substrate temperature T-s= 553 K: The films were characterized by studying their structure and optical properties. The transmittance and reflectance of the films were used to evaluate the optical band gap, width of the localized states and the optical constants n and k. The effect of oxygen partial pressure on the optical band gap, and the width of the localized states was studied in detail. The wavelength dependence of n and k is also reported. (C) 1998 Elsevier Science B.V.