Effects of advanced processes on hot carrier reliability

被引：4

作者：

Aur, S ^{[1
]}

Grider, T ^{[1
]}

McNeil, V ^{[1
]}

Holloway, T ^{[1
]}

Eklund, R ^{[1
]}

机构：

[1] Texas Instruments Inc, Log Technol, Dallas, TX 75265 USA

来源：

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL | 1998年

关键词：

D O I：

10.1109/RELPHY.1998.670512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There are several advanced processes which are being actively studied as candidates for sub-0.25 mu m technology and beyond. This paper studies the effects on hot carrier reliability from remote plasma nitrided oxide (RPNO), deuterium anneal and pocket implant. It is found that RPNO can improve the hot carrier reliability by making the effective oxide thickness thinner for oxides of the same physical thickness. The deuterium anneal can improve the hot carrier reliability, even with nitride sidewalls if proper annealing is done. While the pocket implant can reduce short channel effects, the hot carrier lifetime is degraded unless optimization is done.

引用

页码：180 / 183

页数：4