Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography

被引：54

作者：

Ng, Tse Nga ^{[1
]}

Lujan, Rene A. ^{[1
]}

Sambandan, Sanjiv ^{[1
]}

Street, Robert A. ^{[1
]}

Limb, Scott ^{[1
]}

Wong, William S. ^{[1
]}

机构：

[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期

关键词：

D O I：

10.1063/1.2767981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon-based image sensor arrays were fabricated on polyethylene naphthalate substrates, with photodiodes optimized for process temperatures of 150 degrees C. An optimal i-layer thickness was determined to minimize carrier recombination and to maintain sufficient light absorption and acceptable leakage current. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. A flexible image sensor is demonstrated with 75 dots/in. resolution over 180 x 180 pixels and with sensitivity of 1.2 pW/cm(2). (c) 2007 American Institute of Physics.

引用

页数：3

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