Magnetic tunnelling in Fe-Al2O3-Fe trilayers with radio-frequency sputtered Al2O3 barrier layers

被引:7
作者
Fery, C
Hennet, L
Lenoble, O
Piecuch, M
Snoeck, E
Bobo, JF
机构
[1] CNRS, URA 155, LPM, UHP, F-54506 Vandoeuvre Nancy, France
[2] CNRS, CEMES, F-31055 Toulouse, France
[3] CNRS, INSA, UPS,UMR 5830,LPMC, Dept Genie Phys, F-31077 Toulouse, France
关键词
D O I
10.1088/0953-8984/10/30/004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have prepared iron and Al2O3 thin films and Fe-Al2O3-Fe trilayers by RF magnetron sputtering. The argon pressure during the process is found to have a significant influence on the microstructure and the coercivity of the Fe layers so that we could obtain Fe-Al2O3-Fe trilayers with a spin-valve-like magnetic behaviour for Al2O3 thickness as thin as 9 Angstrom. Perpendicular transport measurements of such junctions indicate tunnel behaviour with barrier heights close to 1.5 eV while the barrier width is consistently lower than the nominal Al2O3 thickness. Magnetoresistance of these samples reaches up to 1.1% at room temperature.
引用
收藏
页码:6629 / 6642
页数:14
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