Robustness of the optical conductivity sum rule in bilayer graphene

被引：15

作者：

Benfatto, L. ^{[1
,2
,3
]}

Sharapov, S. G. ^{[4
,5
]}

Carbotte, J. P. ^{[5
]}

机构：

[1] Ctr Studi & Ric Enrico Fermi, I-00184 Rome, Italy

[2] Univ Roma La Sapienza, CNR SMC INFM, I-00185 Rome, Italy

[3] Univ Roma La Sapienza, Dept Phys, I-00185 Rome, Italy

[4] Western Illinois Univ, Dept Phys, Macomb, IL 61455 USA

[5] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.77.125422

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the optical sum associated with the in-plane conductivity of a graphene bilayer. A bilayer asymmetry gap generated in a field-effect device can split apart valence and conduction bands, which otherwise would meet at two K points in the Brillouin zone. In this way, one can go from a compensated semimetal to a semiconductor with a tunable gap. However, the sum rule turns out to be "protected" against the opening of this semiconducting gap, in contrast to the large variations observed in other systems where the gap is induced by strong correlation effects.

引用

页数：6

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