Top-seeded solution growth of bulk SiC:: Search for fast growth regimes

被引：14

作者：

Epelbaum, BM ^{[1
]}

Hofmann, D ^{[1
]}

Müller, M ^{[1
]}

Winnacker, A ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

bulk crystals; silicon carbide; solution growth; top-seeded growth method;

D O I：

10.4028/www.scientific.net/MSF.338-342.107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Top-seeded solution growth of bulk SiC has been accomplished in an argon atmosphere at 100-120 bar with the use of pure silicon melt solvent. Supersaturation in the growth system was shown to be dependent not only on temperature gradient but on the kinetics of the heterogeneous reaction between solid carbon and silicon melt as well. Thick epitaxial layers and boules 20-25 mm in diameter and up to 20 mm in length were grown using different container arrangements. Growth stability and material quality are discussed in context of growth conditions.

引用

页码：107 / 110

页数：4

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