Interference in electron Compton scattering for silicon

被引:3
作者
Exner, A [1 ]
Kohl, H [1 ]
Nelhiebel, M [1 ]
Schattschneider, P [1 ]
机构
[1] VIENNA TECH UNIV,INST ANGEW & TECH PHYS,A-1040 VIENNA,AUSTRIA
关键词
D O I
10.1088/0953-8984/8/16/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Starting from an expression for the double-differential cross section for electron Compton scattering in a crystal for a two-beam case, valid for a small Ewald sphere, the contributions of M-shell and L-shell electrons in silicon to the mixed dynamic form factors are calculated. The shape and intensity of the interference effects that superimpose on the Compton profile are determined. It is shown that the appearance of interference terms renders the cross section asymmetric and dependent on the momentum transfer also in the usual momentum representation. A procedure for an experimental investigation of the interference terms is proposed.
引用
收藏
页码:2835 / 2850
页数:16
相关论文
共 10 条
[1]  
Biggs F., 1975, Atomic Data and Nuclear Data Tables, V16, P201, DOI 10.1016/0092-640X(75)90030-3
[2]  
DUNCANSON WE, 1947, P PHYS SOC LOND, V60, P175
[3]   COMPTON SCATTERING OF X-RAYS FROM BOUND ELECTRONS [J].
EISENBERGER, P ;
PLATZMAN, PM .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1970, 2 (02) :415-+
[4]   COHERENT ELECTRON COMPTON-SCATTERING IN CRYSTALS [J].
EXNER, A ;
KOHL, H ;
SCHATTSCHNEIDER, P ;
JONAS, P .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (18) :3443-3452
[5]   THE EXPERIMENTAL CONDITIONS FOR COMPTON-SCATTERING IN THE ELECTRON-MICROSCOPE [J].
JONAS, P ;
SCHATTSCHNEIDER, P .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (39) :7173-7188
[6]  
Press W. H., 1986, NUMERICAL RECIPES
[7]  
Reimer L., 1984, TRANSMISSION ELECT M
[8]  
SCHATTSCHNEIDER P, 1990, SCANNING MICROSC S, V4, P35
[9]   NONDIAGONAL MOMENTUM DENSITY OF SI BY COHERENT INELASTIC X-RAY-SCATTERING [J].
SCHULKE, W ;
MOURIKIS, S .
ACTA CRYSTALLOGRAPHICA SECTION A, 1986, 42 :86-98
[10]  
SPIERTZ A, 1994, SAGAMORE, V11, P107