Extremely low temperature growth of ZnO by atomic layer deposition

被引：215

作者：

Guziewicz, E. ^{[1
]}

Kowalik, I. A. ^{[1
]}

Godlewski, M. ^{[1
,3
]}

Kopalko, K. ^{[1
]}

Osinniy, V. ^{[1
]}

Wojcik, A. ^{[1
]}

Yatsunenko, S. ^{[1
]}

Lusakowska, E. ^{[1
]}

Paszkowicz, W. ^{[1
]}

Guziewicz, M. ^{[2
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Inst Electr Mat Technol, Warsaw, Poland

[3] Cardinal S Wyszynski Univ, Coll Sci, Dept Math Nat Sci, Warsaw, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 03期

关键词：

D O I：

10.1063/1.2836819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the zinc oxide (ZnO) thin films obtained by the atomic layer deposition (ALD) method using diethyl zinc and water precursors, which allowed us to lower deposition temperature to below 200 degrees C. The so-obtained "as grown" ZnO layers are polycrystalline and show excitonic photoluminescence (PL) at room temperature, even if the deposition temperature was lowered down to 100 degrees C. Defect-related PL bands are of low intensity and are absent for layers grown at 140-200 degrees C. This is evidence that extremely low temperature growth by ALD can result in high quality ZnO thin films with inefficient nonradiative decay channels and with thermodynamically blocked self-compensation processes. (C) 2008 American Institute of Physics.

引用

页数：6

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[1] New air-stable n-channel organic thin film transistors [J].