Properties of TaNx films as diffusion barriers in the thermally stable Cu/Si contact systems

被引：101

作者：

Takeyama, M ^{[1
]}

Noya, A ^{[1
]}

Sase, T ^{[1
]}

Ohta, A ^{[1
]}

Sasaki, K ^{[1
]}

机构：

[1] KITAMI INST TECHNOL,FAC ENGN,DEPT MAT SCI,KITAMI,HOKKAIDO 090,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期

关键词：

D O I：

10.1116/1.589155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of Ta2N and TaN compound films as a diffusion barrier between Cu and Si have been investigated by examining compositional depth profiles obtained by Auger electron spectroscopy. The use of a Ta2N barrier is effective for improving the thermal stability of the contact system by raising the silicide formation temperature as compared with the use of a Ta barrier. The contact system of Cu/TaN/Si is fairly stable due to annealing for 1 h even at 750 degrees C. This is interpreted by the stability of the TaN compound, which is chemically inert to Si as well as Cu at this temperature. Eliminating the grain growth of TaN due to annealing is also effective for suppressing the: physical diffusion through the barrier. (C) 1996 American Vacuum Society.

引用

页码：674 / 678

页数：5

共 19 条

[1] CONTROLLED ION-BEAM SPUTTER DEPOSITION OF W/CU/W LAYERED FILMS FOR MICROELECTRONIC APPLICATIONS [J].

AUCIELLO, O ;

CHEVACHAROENKUL, S ;

AMEEN, MS ;

DUARTE, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :625-631

[2] TA AS A BARRIER FOR THE CU/PTSI,CU/SI, AND AL/PTSI STRUCTURES [J].

CHANG, CA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (05) :3796-3802

[3] STRUCTURAL AND ELECTRICAL PROPERTIES OF TA AND TA NITRIDES DEPOSITED BY CHEMICAL VAPOR-DEPOSITION [J].

HIEBER, K .

THIN SOLID FILMS, 1974, 24 (01) :157-164

[4] TANTALUM AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON - FAILURE MECHANISM AND EFFECT OF NITROGEN ADDITIONS [J].

HOLLOWAY, K ;

FRYER, PM ;

CABRAL, C ;

HARPER, JME ;

BAILEY, PJ ;

KELLEHER, KH .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :5433-5444

[5] TANTALUM AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON [J].

HOLLOWAY, K ;

FRYER, PM .

APPLIED PHYSICS LETTERS, 1990, 57 (17) :1736-1738

[6] CHARACTERIZATION OF THE OXIDATION OF TANTALUM NITRIDE [J].

IBIDUNNI, AO ;

MASAITIS, RL ;

OPILA, RL ;

DAVENPORT, AJ ;

ISAACS, HS ;

TAYLOR, JA .

SURFACE AND INTERFACE ANALYSIS, 1993, 20 (07) :559-564

[7]

*JCPDS, 251280 JCPDS

[8]

*JCPDS, 260985 JCPDS

[9]

*JCPDS, 321283 JCPDS

[10]

MOULDER JF, 1992, HDB XRAY PHOTOELECTR, P170

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