Sensor design for the ATLAS-pixel detector

被引：35

作者：

Rohe, T

Hugging, F

Lutz, G

Richter, RH

Wunstorf, R

机构：

[1] MPI, Halbleiterlab, D-81245 Munchen, Germany

[2] Univ Dortmund, Lehrstuhl Expt Phys 4, D-44221 Dortmund, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 409卷 / 1-3期

关键词：

D O I：

10.1016/S0168-9002(97)01266-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The inner detector of the ATLAS experiment will contain three layers of pixel detectors. The prototype of the sensor part is an n(+)n-device in order to allow partial depleted operation after bulk inversion and a guard-ring scheme keeping the entire detector surface close to the electronic chip on ground potential. Further, a bias structure is introduced providing testability of the sensors before mounting them to the electronics. The design of the single pixel cell is the result of a detailed device simulation study. (C) 1998 Elsevier Science B,V. All rights reserved.

引用

页码：224 / 228

页数：5

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