Microstructural characterization of Au/Sn solder for packaging in optoelectronic applications

被引:69
作者
Ivey, DG [1 ]
机构
[1] Univ Alberta, Dept Chem & Mat Engn, Edmonton, AB T6G 2G6, Canada
关键词
solder; Au/Sn; InP; coevaporation; electron microscopy;
D O I
10.1016/S0968-4328(97)00057-7
中图分类号
TH742 [显微镜];
学科分类号
摘要
Preliminary results on the feasibility of using co-evaporation of eutectic Au/Sn solder for semiconductor packaging are presented. Gold is electron beam evaporated, while Sn is thermally evaporated, onto Ti/Pt/Au metallized InP substrates. Electron microscopy is utilized to determine the composition and uniformity of the solder and to characterize interfacial reactions between the solder and the semiconductor metallization. Eutectic Au/Sn solder, several microns thick, can be deposited with intermittent substrate cooling. Heating of the solder during simulated reflow experiments results in dissolution of Au and Pr into the solder, with Pt going into substitutional solid solution in AuSn. Part of the Ti layer is consumed as well, forming Au,Ti containing Sn. Bonding tests, reveal solder joints with a uniform distribution of small pores, significantly less than 1 mu m in size. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:281 / 287
页数:7
相关论文
共 10 条
[1]   A new bonding technique for microwave devices [J].
Dohle, GR ;
Callahan, JJ ;
Martin, KP ;
Drabik, TJ .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1996, 19 (01) :57-63
[2]  
HUNZIKER W, 1996, P 46 EL COMP TECHN C, P8
[3]  
JONES H, 1982, I METALLURGISTS MONO, V8
[4]   TI/PT/AU-SN METALLIZATION SCHEME FOR BONDING OF INP-BASED LASER-DIODES TO CHEMICAL-VAPOR-DEPOSITED DIAMOND SUBMOUNTS [J].
KATZ, A ;
WANG, KW ;
BAIOCCHI, FA ;
DAUTREMONTSMITH, WC ;
LANE, E ;
LUFTMAN, HS ;
VARMA, RR ;
CURNAN, H .
MATERIALS CHEMISTRY AND PHYSICS, 1993, 33 (3-4) :281-288
[5]   AU-SN/W AND AU-SN/CR METALLIZED CHEMICAL-VAPOR-DEPOSITED DIAMOND HEAT SINKS FOR INP LASER DEVICE APPLICATIONS [J].
KATZ, A ;
BAIOCCHI, F ;
LANE, E ;
LEE, CH ;
HALL, C ;
DOTING, J ;
GRIJSBACH, C ;
HARRIS, K .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :563-567
[6]   ADVANCED METALLIZATION SCHEMES FOR BONDING OF INP-BASED LASER DEVICES TO CVD-DIAMOND HEATSINKS [J].
KATZ, A ;
LEE, CH ;
TAI, KL .
MATERIALS CHEMISTRY AND PHYSICS, 1994, 37 (04) :303-328
[7]   BONDING OF INP LASER-DIODES BY AU-SN SOLDER AND TUNGSTEN-BASED BARRIER METALLIZATION SCHEMES [J].
LEE, CH ;
TAI, KL ;
BACON, DD ;
DOHERTY, C ;
KATZ, A ;
WONG, YM ;
LANE, E .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (04) :379-386
[8]   AU-SN ALLOY PHASE-DIAGRAM AND PROPERTIES RELATED TO ITS USE AS A BONDING MEDIUM [J].
MATIJASEVIC, GS ;
LEE, CC ;
WANG, CY .
THIN SOLID FILMS, 1993, 223 (02) :276-287
[9]   AU-SN SOLDER BUMPS WITH TUNGSTEN SILICIDE BASED BARRIER METALLIZATION SCHEMES [J].
PITTROFF, W ;
REICHE, T ;
BARNIKOW, J ;
KLEIN, A ;
MERKEL, U ;
VOGEL, K ;
WURFL, J .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2367-2369
[10]  
WADA O, 1992, MATER RES SOC SYMP P, V260, P713, DOI 10.1557/PROC-260-713