Electrical properties of LiF/Ag(001) heterostructure

被引：1

作者：

Chiaki, T

Kiguchi, M

Saiki, K

Koma, A

机构：

[1] Univ Tokyo, Grad Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

[2] Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 7B期

关键词：

alkali halides; breakdown; MBE; field effect transistors; thin films;

D O I：

10.1143/JJAP.42.4713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Breakdown properties of thin insulating films of LiF were studied by the 2-probe method in vacuum. A LiF film was found to grow heteroepitaxially on a Ag(001) substrate at 700K, while an amorphous LiF,film grew at room temperature. The breakdown strength depended on the crystallinity of LiF, but was not related to the film thickness. The single-crystalline LiF films could work up to higher electric fields than the conventional insulator films.

引用

页码：4713 / 4715

页数：3

共 15 条

[1] Organic field-effect transistors with high mobility based on copper phthalocyanine [J].