Graphene/Silicon Nanowire Schottky Junction for Enhanced Light Harvesting

被引：215

作者：

Fan, Guifeng

Zhu, Hongwei ^{[1
]}

Wang, Kunlin

Wei, Jinquan

Li, Xinming

Shu, Qinke

Guo, Ning

Wu, Dehai

机构：

[1] Tsinghua Univ, Minist Educ, Key Lab Adv Mfg Mat Proc Technol, Beijing 100084, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2011年 / 3卷 / 03期

基金：

美国国家科学基金会;

关键词：

graphene; silicon nanowires; Schottky junctions; solar cells; SOLAR-CELLS; FUNCTIONALIZED GRAPHENE; TRANSPARENT; ELECTRODES; FILMS; TRANSPORT; ARRAYS;

D O I：

10.1021/am1010354

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Schottky junction solar cells are assembled by directly coating graphene films on n-type silicon nanowire (SiNW) arrays. The graphene/SiNW junction shows enhanced light trapping and faster carrier transport compared to the graphene/planar Si structure. With chemical doping, the SiNW-based solar cells showed energy conversion efficiencies of up to 2.86% at AM1.5 condition, opening a possibility of using graphene/semiconductor nanostructures in photovoltaic application.

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收藏

页码：721 / 725

页数：5

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