Relaxation time of short wavelength intersubband transition in InGaAs/AlAs quantum wells

被引：23

作者：

Asano, T ^{[1
]}

Noda, S ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 11期

关键词：

intersubband transition; short-wavelength; energy relaxation time; absorption saturation; inhomogeneous broadening;

D O I：

10.1143/JJAP.37.6020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Linear and nonlinear light absorption characteristics of short-wavelength (near-infrared) intersubband transition in InGaAs/AlAs quantum wells are investigated for estimation of the intersubband relaxation lime. Linear absorption measurements reveal that the intersubband absorption width is dominated by the inhomogeneous broadening caused by well-width fluctuations. Nonlinear absorption measurement results are analyzed by focusing on the inhomogeneous broadening and probe pulse width, which reveals that the intersubband energy relaxation time is as short as 1-10 ps. The observed relaxation time is of the same order as those of long wavelength (far-infrared) intersubband transitions. This result is expected to be useful for the ultrafast application of short-wavelength intersubband transition.

引用

页码：6020 / 6024

页数：5

共 23 条

[1] INTERSUBBAND ABSORPTION IN IN0.53GA0.47AS/IN0.52AL0.48AS MULTIPLE QUANTUM-WELLS [J].

ASAI, H ;

KAWAMURA, Y .

PHYSICAL REVIEW B, 1991, 43 (06) :4748-4759

[2] Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate [J].

Asano, T ;

Noda, S ;

Abe, T ;

Sasaki, A .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) :3385-3391

[3] Near-infrared intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate [J].

Asano, T ;

Noda, S ;

Abe, T ;

Sasaki, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1285-1291

[4]

ASANO T, 1996, P PHOT SWITCH 96 PWD

[5] EXCHANGE INTERACTIONS IN QUANTUM WELL SUBBANDS [J].

BANDARA, KMSV ;

COON, DD ;

O, BS ;

LIN, YF ;

FRANCOMBE, MH .

APPLIED PHYSICS LETTERS, 1988, 53 (20) :1931-1933

[6]

BECK WA, 1994, NATO ADV SCI INST SE, V270, P55

[7] CARRIER-CARRIER SCATTERING AND OPTICAL DEPHASING IN HIGHLY EXCITED SEMICONDUCTORS [J].

BINDER, R ;

SCOTT, D ;

PAUL, AE ;

LINDBERG, M ;

HENNEBERGER, K ;

KOCH, SW .

PHYSICAL REVIEW B, 1992, 45 (03) :1107-1115

[8] SHORT-WAVELENGTH INTERSUBBAND TRANSITIONS IN INGAAS/ALGAAS QUANTUM-WELLS GROWN ON GAAS [J].

CHUI, HC ;

MARTINET, EL ;

FEJER, MM ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1994, 64 (06) :736-738

[9] MEASUREMENT OF THE INTERSUBBAND SCATTERING RATE IN SEMICONDUCTOR QUANTUM-WELLS BY EXCITED-STATE DIFFERENTIAL ABSORPTION-SPECTROSCOPY [J].

FAIST, J ;

CAPASSO, F ;

SIRTORI, C ;

SIVCO, DL ;

HUTCHINSON, AL ;

CHU, SNG ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1993, 63 (10) :1354-1356

[10]

FALST J, 1995, APPL PHYS LETT, V66, P538

← 1 2 3 →