Impurity doping and compensation mechanisms in CdTe

被引：76

作者：

Marfaing, Y ^{[1
]}

机构：

[1] CNRS, LPSC, F-92195 Meudon, France

来源：

THIN SOLID FILMS | 2001年 / 387卷 / 1-2期

关键词：

CdTe; impurity doping; compensation; native defects;

D O I：

10.1016/S0040-6090(00)01717-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A short theoretical analysis of the main mechanisms governing the efficiency of impurity doping in CdTe is first presented. Then doping experiments with donor (Al, In, Cl, Br, I) and acceptor (N, As) impurities are reviewed. It has been shown that uncompensated n-type and p-type doping up to a limit in the range 10(17)-10(19) cm(-3), depending on the element, can be achieved under proper conditions of incorporation. The implication of impurities in the fabrication steps of CdS/CdTe solar cells, including the CdCl2 treatment, is briefly discussed. Finally, the present state of knowledge about particular native point defects in tellurium-saturated CdTe (V-Cd, Te-Cd) is examined. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：123 / 128

页数：6

共 38 条

[1] n- and p-type modulation doping of Te related semimagnetic II-VI heterostructures [J].