Secondary barriers in CdS-CuIn1-xGaxSe2 solar cells -: art. no. 064901

被引：116

作者：

Pudov, AO ^{[1
]}

Kanevce, A

Al-Thani, HA

Sites, JR

Hasoon, FS

机构：

[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 06期

关键词：

D O I：

10.1063/1.1850604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Previous work on CdS-CuInSe2 (CIS) solar cells, which reported distortions of their current-voltage (J-V) curves under red illumination, is expanded in this work to include CdS-CuIn1-xGaxSe2 cells with variable Ga and CIS cells with variable CdS thickness. Different amounts of J-V distortion were observed in these cells under red light. The details are in good agreement with predictions of a photodiode model, in which a secondary barrier caused by the positive conduction-band discontinuity (spike) at the buffer-absorber interface is responsible for the current limitation. The illumination of the cell with high-energy photons lowers the barrier due to buffer photoconductivity, and thus removes the J-V distortion. (C) 2005 American Institute of Physics.

引用

页数：6

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