Present status of InGaN/GaN/AlGaN-based laser diodes

被引：101

作者：

Nakamura, S ^{[1
]}

Senoh, M ^{[1
]}

Nagahama, S ^{[1
]}

Iwasa, N ^{[1
]}

Yamada, T ^{[1
]}

Matsushita, T ^{[1
]}

Kiyoku, H ^{[1
]}

Sugimoto, Y ^{[1
]}

Kozaki, T ^{[1
]}

Umemoto, H ^{[1
]}

Sano, M ^{[1
]}

Chocho, K ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

blue laser diode; InGaN; GaN; superlattice; modulation doping; laterally overgrowth;

D O I：

10.1016/S0022-0248(98)00302-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaN multl-quantum-well-structure (MQW) laser diodes (LDs) with Al0.14Ga0.86N/GaN modulation-doped strained-layer superlattice (MD-SLS) cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation. The lasing was a single mode emission at a wavelength of 403.7 nm. The use of the MD-SLS was effective in reducing the operating voltage of the LDs. The ELOG substrate was used to reduce the number of threading dislocations in the InGaN MQW structure. After 2 mu m etching of the ELOG substrate, the etch pit density was about 2 x 10(7)/cm(2) in the region of the 4 mu m wide stripe window, but almost zero in the region of the 8 mu m wide SiO2 stripe. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：820 / 825

页数：6

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