Electrical properties of porphyrin-based switching devices

被引：27

作者：

Koo, JR

Lee, HS

Ha, Y

Choi, YH

Kim, YK

机构：

[1] Hongik Univ, Dept Elect Informat & Control Engn, Seoul 121791, South Korea

[2] Hongik Univ, COMID, Seoul 121791, South Korea

[3] Hongik Univ, Res Inst Sci & Technol, Seoul 121791, South Korea

[4] Hongik Univ, Dept Sci, Seoul 121791, South Korea

[5] Hongik Univ, Dept Comp Engn, Seoul 121791, South Korea

[6] Hongik Univ, Dept Chem Engn, Seoul 121791, South Korea

来源：

THIN SOLID FILMS | 2003年 / 438卷

关键词：

Langmuir-Blodgett (LB) film; redox-active molecule; tunneling diode; switching device; molecular-scale memory;

D O I：

10.1016/S0040-6090(03)00807-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular switching devices were reported utilizing Langmuir-Blodgett (LB) monolayer films containing the 5,10,15,20-Tetrakis-Octadecyloxymethylphenyl-Porphyrin-Zn(II) as a redox-active component. From current-voltage (I-V) characteristics, it was found that the devices exhibit outstanding switching diode and tunneling diode behavior at room temperature, which seems to be due to the asymmetric device structure. These electrical properties of the devices may be applicable to active components for the memory and/or logic circuits in the future. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：123 / 127

页数：5

共 13 条

[1] MOLECULAR RECTIFIERS [J].