Thick film hybrid packaging techniques for 500°C operation

被引：18

作者：

Salmon, JS ^{[1
]}

Johnson, RW ^{[1
]}

Palmer, M ^{[1
]}

机构：

[1] Auburn Univ, Dept Elect Engn, Auburn, AL 36849 USA

来源：

1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE | 1998年

关键词：

D O I：

10.1109/HITEC.1998.676769

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

A source follower circuit was constructed on a custom alumina substrate using thick film hybrid techniques and 4H-SiC: JFETs. The circuit is intended for long term operation at a temperature of 300 degrees C. For this reason, the various components of the circuit assembly (wire bonds, resistors, die attach, substrate metalization) have undergone accelerated reliability testing at an elevated temperature of 500 degrees C, These experiments have confirmed the operation of SIC based circuits at a temperature of 300 degrees C, but also, prove the plausibility of future circuits operating in the 500 degrees C range.

引用

页码：103 / 108

页数：6