Single shot transient suppressor (SSTS) for high current high slew rate microprocessor

被引:44
作者
Amoroso, L [1 ]
Donati, M [1 ]
Zhou, XW [1 ]
Lee, FC [1 ]
机构
[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect Engn, Virginia Power Elect Ctr, Blacksburg, VA 24061 USA
来源
APEC'99: FOURTEENTH ANNUAL APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, CONFERENCE PROCEEDINGS, VOLS 1 & 2 | 1999年
关键词
D O I
10.1109/APEC.1999.749649
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Future generation microprocessors are predicted to exhibit heavier loads and faster transients. Conventional Voltage Regulator Modules (VRM) need a large amount of output filter capacitors to meet future requirements and a huge number of decoupling capacitors, mainly due to the presence of parasitic Inductance between VRM and the microprocessor. In this paper a new active clamp concept is presented. By charging some auxiliary capacitors at higher voltage it is possible to store the amount of charge required by the processor during the step up transient; this extra charge can be locally delivered to the processor in a single shot manner, bypassing the slower VRM. In the same way this circuit cad sink the excess of charge that has to be removed during the step down transient. By using this transient suppressor circuit, conventional VRM can still provide adequate steady state regulation, while the size of decoupling and filter capacitors can be significantly reduced. Experimental results prove the validity of the concept.
引用
收藏
页码:284 / 288
页数:3
相关论文
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