Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime

被引：236

作者：

Kedzierski, J ^{[1
]}

Xuan, PQ ^{[1
]}

Anderson, EH ^{[1
]}

Bokor, J ^{[1
]}

King, TJ ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-body transistors with silicide source/drains were fabricated with gate-lengths down to 15nm. Complementary low-barrier silicides were used to reduce contact and series resistance. Minimum gate-length transistors with T-ox=40 Angstrom show PMOS /I-dat/=270 muA/mum and NMOS /Id(sat)/=190 muA/mum with V-ds=1.5V, /V-g-V-t/=1.2V and, I-on/I-off>10(4). A simple transmission model, fitted to experimental data, is used to investigate effects of oxide scaling and extension doping.

引用

页码：57 / 60

页数：4

共 7 条

[1]

[Anonymous], 1997, Proc. 1997 Int. Semiconductor Device Research Symp., Charlottesville

[2] Work function of boron-doped polycrystalline SixGe1-x films [J].

Hellberg, PE ;

Zhang, SL ;

Petersson, CS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :456-458

[3]

Huang X., 1999, IEDM Tech. Dig, P67, DOI DOI 10.1109/IEDM.1999.823848

[4]

Timp G., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P55, DOI 10.1109/IEDM.1999.823845

[5] CONDUCTION MECHANISMS IN ERBIUM SILICIDE SCHOTTKY DIODES [J].

UNEWISSE, MH ;

STOREY, JWV .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3873-3879

[6] Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111) [J].

Vandré, S ;

Kalka, T ;

Preinesberger, C ;

Dähne-Prietsch, M .

PHYSICAL REVIEW LETTERS, 1999, 82 (09) :1927-1930

[7] Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors [J].

Wang, C ;

Snyder, JP ;

Tucker, JR .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1174-1176

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