High-efficiency GaAs-based pHEMT C-band power amplifier

被引：12

作者：

Brown, JJ

Pusl, JA

Hu, M

Schmitz, AE

Docter, DP

Shealy, JB

Case, MG

Thompson, MA

Nguyen, LD

机构：

[1] Hughes Research Laboratories, Malibu

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1996年 / 6卷 / 02期

关键词：

D O I：

10.1109/75.481999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-efficiency C-Band power amplifier design utilizing AlGaAs/InGaAs/GaAs pHEMT's is reported, On-wafer active loadpull power measurements at 4.5 GHz of a 0.25 mu m x 1.2 mm pHEMT exhibited an output power of 0.35 W and power-added efficiency of 79%. A single-stage MIC amplifier fabricated with a 2.8-mm-wide pHEMT resulted in P-out = 1.2 W and PAE = 74% at 4 GHz, These results demonstrate the potential of pHEMT's to significantly improve the efficiency performance of microwave solid state power amplifiers compared to present MESFET designs.

引用

页码：91 / 93

页数：3

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