Magnetic and transport properties of sub-micron ferromagnetic wires

被引：54

作者：

Otani, Y ^{[1
]}

Kim, SG

Fukamichi, K

Kitakami, O

Shimada, Y

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 98077, Japan

[2] Tohoku Univ, Sci Measurements Res Inst, Sendai, Miyagi 98077, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 04期

基金：

日本学术振兴会;

关键词：

domain wall; magnetoresistance; submicron-ferromagnetic wire;

D O I：

10.1109/20.706372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Submicron Co wires with a variable width in the range from 0.2 to 2 mu m and paired Co disks with a variable diameter in the range from 0.4 to 5 mu m were prepared to investigate the magnetoresistance effect in association with the domain wall formation. A clear change in resistivity due to traversing domain wall along the wire is observed for all the widths in both longitudinal and transverse magnetoresistance effects. The domain wall gives a negative contribution to the magnetoresistance effect, Longitudinal magnetoresistance effects of paired Co disks show an anomalous increase in low fields below 20 kOe due to the peculiar vortex structure stabilized in the disk.

引用

页码：1096 / 1098

页数：3

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