Low temperature growth of PZT(52/48) thin films using RF magnetron sputtering method

Comparatively low temperature growth of Pb(Zr0.52Ti0.48)O-3 thin films was accomplished by using rf magnetron sputtering process. Well crystallized PZT thin films (4000 Angstrom thickness) were synthesized on Pt/Ti/SiO2/Si(100) substrate at the temperature as low as 520 degrees C. The polycrystalline PZT perovskite phase formation was confirmed with XRD analysis. Remanent polarization(P-r) and coercive field(E(c)) of as-grown film (4000 Angstrom) were 8-30 mu C/cm(2) and 24-64 kV/cm with the applied voltage variation(5-17 V). The post annealing enhances the electrical properties even at 500 degrees C, which is below the as-grown temperature(520 degrees C). The increase of annealing temperature resulted in the consequent increase of remanent polarization and the decrease of coercive field. The values of dielectric constant(epsilon') and tan delta measured with small signal sign wave(1V, 10kHz) were 1207 and 0.066 in case of as-grown film (4000 Angstrom).