Raman investigation of ion beam synthesized β-FeSi2

被引：39

作者：

Birdwell, AG ^{[1
]}

Glosser, R

Leong, DN

Homewood, KP

机构：

[1] Univ Texas, Dept Phys, Richardson, TX 75083 USA

[2] Univ Surrey, Dept Elect & Elect Engn, Guildford GU2 5XH, Surrey, England

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 02期

关键词：

D O I：

10.1063/1.1326473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Raman spectra of ion beam synthesized (IBS) beta -FeSi2 are investigated and evidence for the presence of a net tensile stress is presented. Possible origins of the observed stress are suggested and a simple model is proposed in order to calculate a value of the observed stress. A correlation between the tensile stress, the nature of the band gap, and the resulting light emitting properties of IBS beta -FeSi2 is suggested. (C) 2001 American Institute of Physics.

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页码：965 / 972

页数：8

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