Magnetic tunneling effect in Fe/Al2O3/Ni1-xFex junctions

被引：36

作者：

Tezuka, N

Miyazaki, T

机构：

[1] Department of Applied Physics, Faculty of Engineering, Tohoku University

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.362028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of the magnetoresistance ratio, Delta R/R(s), on the Ni content has been studied in Fe/Al2O3/Ni1-xFex (0 less than or equal to x less than or equal to 1) tunneling junctions. The value of Delta R/R(s) at 4.2 K increased with increasing x and exhibited a maximum of similar to 35% at x = 0.8. The result is discussed by taking into account the spin-polarization of ferromagnetic electrodes. (C) 1996 American Institute of Physics.

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页码：6262 / 6264

页数：3

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