A 1060 nm diode laser system for dynamically probing silicon detectors

被引：2

作者：

Krizmanic, J ^{[1
]}

Spangler, J ^{[1
]}

Newman, D ^{[1
]}

Orndorff, J ^{[1
]}

机构：

[1] JOHNS HOPKINS UNIV,DEPT PHYS & ASTRON,BALTIMORE,MD 21218

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 374卷 / 03期

关键词：

D O I：

10.1016/0168-9002(96)00239-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have constructed a 1060 nm laser system which has been used to dynamically probe silicon microstrip detectors. A diode laser is coupled to a single mode fiber with a less than 10 mu m measured spot size. The laser is driven by a nanosecond pulse with sub-nanosecond rise and fall times. The fast response and small spot size allow for measurements of such quantities as time walk in microstrip detectors. The system has been used to generate 5-100 fC of charge in a 300 mu m thick silicon microstrip detector. The laser also has been used in localized depletion voltage measurements and to test the integrity of sensors wire bonded to readout electronics.

引用

页码：315 / 319

页数：5

共 4 条

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[3] CHARACTERIZATION AND QUALITY-CONTROL OF SILICON MICROSTRIP DETECTORS WITH AN INFRARED DIODE-LASER SYSTEM [J].

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[4]

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