The Raman spectrum of Ti3SiC2

被引：131

作者：

Amer, M ^{[1
]}

Barsoum, MW

El-Raghy, T

Weiss, I

Leclair, S

Liptak, D

机构：

[1] Wright State Univ, Dept Mech & Mat Engn, Dayton, OH 45435 USA

[2] Drexel Univ, Dept Mat Engn, Philadelphia, PA 19104 USA

[3] USAF, Res Lab, Mat Proc Design Branch, Dayton, OH 45435 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.368849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the Raman spectrum of Ti3SiC2 is reported and compared with that of TiC0.67. All the TiC0.67 first order Raman disorder-induced modes are active, but shifted, in Ti3SiC2. Two additional peaks at 150 and 372 cm(-1) are observed in Ti3SiC2. The former is ascribed to a shear mode between the Si and Ti planes; the origin of the latter is unknown. No second order Raman bands are detected. Micro-Raman spectroscopy also reveal the presence of approximate to 50 Angstrom graphite crystallites in samples hot pressed in graphite dies-these crystallites are not detected in samples processed by hot isostatic pressing in molten glass containers. (C) 1998 American Institute of Physics. [S0021-8979(98)06622- 5].

引用

页码：5817 / 5819

页数：3

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