Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films

被引:153
作者
Patnaik, S
Cooley, LD
Gurevich, A
Polyanskii, AA
Jing, J
Cai, XY
Squitieri, AA
Naus, MT
Lee, MK
Choi, JH
Belenky, L
Bu, SD
Letteri, J
Song, X
Schlom, DG
Babcock, SE
Eom, CB
Hellstrom, EE
Larbalestier, DC
机构
[1] Univ Wisconsin, Ctr Appl Superconduct, Madison, WI 53706 USA
[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
关键词
D O I
10.1088/0953-2048/14/6/304
中图分类号
O59 [应用物理学];
学科分类号
摘要
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio H-c2(parallel to)/H-c2(perpendicular to) is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H+ approximate to 0.8H(c2)(perpendicular to)(T) in untextured samples. H-c2(parallel to)(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.
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收藏
页码:315 / 319
页数:5
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