A novel method of optical detection using a capacitive device

被引：14

作者：

Paul, BC ^{[1
]}

Satyam, M ^{[1
]}

Selvarajan, A ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Elect Commun Engn, Bangalore 560012, Karnataka, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 02期

关键词：

insulator-semiconductor-insulator structure; MOS devices; photodetectors;

D O I：

10.1109/16.740897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new method of optical detection, which essentially involves the measurement of the change in charge spectrum of MOS capacitors with incident light. It also suggests a symmetric insulator-semiconductor-insulator (ISI) structure for an efficient optical detector.

引用

页码：324 / 328

页数：5