Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability

被引：44

作者：

Low, TS ^{[1
]}

Hutchinson, CP ^{[1
]}

Canfield, PC ^{[1
]}

Shirley, TS ^{[1
]}

Yeats, RE ^{[1
]}

Chang, JSC ^{[1
]}

Essilfie, GK ^{[1
]}

Culver, MK ^{[1
]}

Whiteley, WC ^{[1
]}

D'Avanzo, DC ^{[1
]}

Pan, N ^{[1
]}

Elliot, J ^{[1
]}

Lutz, C ^{[1
]}

机构：

[1] Hewlett Packard Co, Santa Rosa, CA 95403 USA

来源：

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998 | 1998年

关键词：

D O I：

10.1109/GAAS.1998.722654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A reliable high performance InGaP emitter HBT process has been developed for RF and microwave instruments. The InGaP process achieves Ft and Fmax values of 65 GHz and 75 GHz, respectively, with BVceo = 8.4 V and beta = 132. The MTTF values of >5x10(5) hours at maximum operating conditions (Tj=150 degrees C, Jc=0.6 mA/um(2)) are an order of magnitude larger than values measured on both internal and commercially available AlGaAs emitter HBT circuits. The dominant failure mode was beta drift, consistent with other published reports for other InGaP HBTs, but the Ea of 0.68 eV is much smaller than published values, which suggests that an additional high activation energy mechanism was introduced at the high temperatures used in the published reliability tests.

引用

页码：153 / 156

页数：4