High density germanium nanowire assemblies: Contact challenges and electrical characterization

被引:52
作者
Erts, D
Polyakov, B
Dalyt, B
Morris, MA
Ellingboe, S
Boland, J
Holmes, JD [1 ]
机构
[1] Natl Univ Ireland Univ Coll Cork, Dept Chem, Mat Sect, Cork, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Supercrit Fluid Ctr, Cork, Ireland
[3] Univ Dublin Trinity Coll, Ctr Adapt Nanostruct & nanodevices, CRANN, Dublin 2, Ireland
[4] Latvian State Univ, Inst Chem Phys, LV-1586 Riga, Latvia
关键词
D O I
10.1021/jp055309p
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The conductive properties of vertically aligned germanium nanowires, with mean diameters of 50 and 100 nm, within anodized aluminum oxide (AAO) templates have been characterized by conductive atomic force microscopy (C-AFM) and macrocontact measurements. C-AFM was used to determine the electrical transport properties of individual nanowires within the arrays, while macrocontacts were used to measure the mean current-voltage characteristics of groups of nanowires. Contact resistance between the nanowires and metal macrocontacts was minimized by polishing and gradual etching of the AAO surface, to expose the nanowires, prior to deposition of the contacts. Impedance measurements were used to analyze the importance of defects on the charge transport properties of the germanium nanowire arrays. Conductivity data from C-AFM and macrocontact measurements were found to be comparable suggesting that both methods are inherently suitable for evaluating the electrical transport properties of encapsulated nanowires within a matrix. These results are significant as the ability to make good ohmic contacts to nanowires, within well-defined arrays, is key for the future "bottom-up" fabrication of multilayered device architectures for future electronic and optoelectronic devices.
引用
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页码:820 / 826
页数:7
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