Novel materials for high-efficiency III-V multi-junction solar cells

被引：132

作者：

Yamaguchi, Masafumi ^{[1
]}

Nishimura, Ken-ichi ^{[1
]}

Sasaki, Takuo ^{[1
]}

Suzuki, Hidetoshi ^{[1
]}

Arafune, Kouji ^{[1
]}

Kojima, Nobuaki ^{[1
]}

Ohsita, Yoshio ^{[1
]}

Okada, Yoshitaka ^{[2
]}

Yamamoto, Akio ^{[3
]}

Takamoto, Tatsuya ^{[4
]}

Araki, Kenji ^{[5
]}

机构：

[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

[2] Univ Tsukuba, Tsukuba, Ibaraki 3058573, Japan

[3] Univ Fukui, Fukui 9108507, Japan

[4] Sharp Co Ltd, Nara 6392198, Japan

[5] Daido Steel Corp, Minami Ku, Nagoya, Aichi 4578545, Japan

来源：

SOLAR ENERGY | 2008年 / 82卷 / 02期

关键词：

solar cells; high efficiency; III-V compounds; multi-junction; concentrator; new III-V-nitride materials; quantum wells; quantum dots;

D O I：

10.1016/j.solener.2007.06.011

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

As a result of developing wide bandgap InGaP double hetero structure tunnel junction for sub-cell interconnection, InGaAs middle cell lattice-matched to Ge substrate, and InGaP-Ge heteroface structure bottom cell, we have demonstrated 38.9% efficiency at 489-suns AM1.5 with InGaP/InGaP/Ge 3-junction solar cells by in-house measurements. In addition, as a result of developing a non-imaging Fresnel lens as primary optics, a glass-rod kaleidoscope homogenizer as secondary optics and heat conductive concentrator solar cell modules, we have demonstrated 28.9% efficiency with 550-suns concentrator cell modules with an area of 5445 cm(2). In order to realize 40% and 50% efficiency, new approaches for novel materials and structures are being studied. We have obtained the following results: (1) improvements of lattice-mismatched InGaP/InGaAs/Ge 3-junction solar cell property as a result of dislocation density reduction by using thermal cycle annealing, (2) high quality (In)GaAsN material for 4- and 5-junction applications by chemical beam epitaxy, (3) 11.271%, efficiency InGaAsN single-junction cells, (4) 18.27% efficiency InGaAs/GaAs potentially modulated quantum well cells, and (5) 7.65% efficiency InAs quantum dot cells. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：173 / 180

页数：8

共 22 条

[1] Development of concentrator modules with dome-shaped fresnel lenses and triple-junction concentrator cells [J].

Araki, K ;

Uozumi, H ;

Egami, T ;

Hiramatsu, M ;

Miyazaki, Y ;

Kemmoku, Y ;

Akisawa, A ;

Ekins-Daukes, NJ ;

Lee, HS ;

Yamaguchi, M .

PROGRESS IN PHOTOVOLTAICS, 2005, 13 (06) :513-527

[2]

Araki K, 2003, WORL CON PHOTOVOLT E, P630

[3] DISLOCATION VELOCITIES IN GAAS [J].

CHOI, SK ;

MIHARA, M ;

NINOMIYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) :737-745

[4]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V230, pR4, DOI 10.1002/1521-3951(200204)230:2<R4::AID-PSSB99994>3.0.CO

[5]

2-Z

[6] Hall electron mobility versus N spatial distribution in III-V-N systems [J].

Hashimoto, A ;

Yamaguchi, T ;

Suzuki, T ;

Yamamoto, A .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :532-537

[7]

Kurokawa K., 2004, P 19 EUR PHOT SOL EN, P2731

[8] Effect of nitrogen concentration on the performance of Ga1-xInxNyAs1-y solar cells [J].

Kurtz, S ;

Johnston, SW ;

Geisz, JF ;

Friedman, DJ ;

Ptak, AJ .

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, :595-598

[9] Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells [J].

Lee, Hae-Seok ;

Nishimura, K. ;

Yagi, Y. ;

Tachibana, M. ;

Ekins-Daukes, N. J. ;

Ohshita, Y. ;

Kojima, N. ;

Yamaguchi, M. .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E1127-E1130

[10]

Miyashita N, 2006, WORL CON PHOTOVOLT E, P869

← 1 2 3 →