Magnetron sputtering of aluminium using oxygen or nitrogen as reactive gas

被引:21
作者
Schulte, J [1 ]
Sobe, G [1 ]
机构
[1] Inst Solid State & Mat Res, D-01171 Dresden, Germany
关键词
aluminium; nitrogen; coatings; sputtering;
D O I
10.1016/S0040-6090(97)01197-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For a better understanding of the physical and chemical processes underlying the deposition of aluminium nitride and AIN, thin films by reactive magnetron sputtering of aluminium, we compare sputter gas mixtures of argon and nitrogen with mixtures of argon and oxygen. Depending on the flow rates of the reactive gases, their partial pressures are detected by mass spectroscopy and the aluminium densities in the plasma ring are observed by optical emission spectroscopy. The addition of oxygen results in two stable modes, the reactive mode, corresponding to a target surface almost covered by reaction products, and the metallic mode, corresponding to a metallic target surface. Avalanche-like transitions between these two modes lead to hysteresis loops. On the contrary, using nitrogen, the discharges are in a stable state also for partially covered targets. In this case, there is a gradual transition from a metallic target, which is only found at pure argon, to a maximum-covered target. Only small hysteresis effects and no avalanche-like transitions are observed. We conclude that, if sputtering aluminium targets, the addition of oxygen or nitrogen as the reactive gas to argon discharges represents two different model cases of the reactive sputtering process. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:19 / 24
页数:6
相关论文
共 31 条
[1]   MECHANISMS OF VOLTAGE-CONTROLLED, REACTIVE, PLANAR MAGNETRON SPUTTERING OF AL IN AR-N2 AND AR-O2 ATMOSPHERES [J].
AFFINITO, J ;
PARSONS, RR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (03) :1275-1284
[2]   HYSTERESIS EFFECTS IN THE SPUTTERING PROCESS USING 2 REACTIVE GASES [J].
BARANKOVA, H ;
BERG, S ;
CARLSSON, P ;
NENDER, C .
THIN SOLID FILMS, 1995, 260 (02) :181-186
[3]  
BILLARD A, 1996, VIDE SCI TECH APPL S, V279, P19
[4]   STRUCTURAL-ANALYSIS OF BURIED ALN THIN-FILMS FORMED BY NITROGEN IMPLANTATION INTO MICROELECTRONICS GRADE ALUMINUM [J].
CALVO, L ;
PEREZRODRIGUEZ, A ;
ROMANORODRIGUEZ, A ;
MORANTE, JR ;
MONTSERRAT, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (02) :214-217
[5]   THE ESTIMATION OF MAXIMUM GROWTH-RATE FOR ALUMINUM NITRIDE CRYSTALS GROWN BY DIRECT SUBLIMATION [J].
DRYBURGH, PM .
JOURNAL OF CRYSTAL GROWTH, 1992, 125 (1-2) :65-68
[6]   STRESS-CONTROL IN REACTIVELY SPUTTERED AIN AND TIN FILMS [J].
ESTE, G ;
WESTWOOD, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1892-1897
[7]   Elemental steps in the growth of AlN thin films on NiAl upon thermal decomposition of ammonia [J].
Gassmann, P ;
Schmitz, G ;
Boysen, J ;
Bartolucci, F ;
Franchy, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :813-818
[8]  
KADLEC S, 1986, VACUUM, V37, P728
[9]  
KALEC S, 1986, J PHYS D, V19, pL187
[10]  
LEE HC, 1995, THIN SOLID FILMS, V261, P148