Analysis and simulation of extended hydrodynamic models: The multi-valley Gunn oscillator and MESFET symmetries

被引：2

作者：

Chen, GQ ^{[1
]}

Jerome, JW

Shu, CW

机构：

[1] Northwestern Univ, Dept Math, Evanston, IL 60208 USA

[2] Brown Univ, Div Appl Math, Providence, RI 02912 USA

来源：

VLSI DESIGN | 1998年 / 6卷 / 1-4期

关键词：

Gunn oscillator; two carrier hydrodynamic model; MESFET; symmetry; geometric structure terms;

D O I：

10.1155/1998/21818

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensional geometric effects into a one dimensional model. We study (1) the GaAs device in the notched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present new mathematical results for a reduced model.

引用

页码：277 / 282

页数：6

共 12 条

[1]

[Anonymous], 1994, SEMICONDUCTORS+

[2] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

BLOTEKJAER, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+

[3] Particle hydrodynamic moment models in biology and microelectronics: singular relaxation limits [J].

Chen, GQ ;

Jerome, JW ;

Zhang, B .

NONLINEAR ANALYSIS-THEORY METHODS & APPLICATIONS, 1997, 30 (01) :233-244

[4] Global solutions to the compressible Euler equations with geometrical structure [J].

Chen, GQ ;

Glimm, J .

COMMUNICATIONS IN MATHEMATICAL PHYSICS, 1996, 180 (01) :153-193

[5] Convergence of shock capturing schemes for the compressible Euler-Poisson equations [J].

Chen, GQ ;

Wang, D .

COMMUNICATIONS IN MATHEMATICAL PHYSICS, 1996, 179 (02) :333-364

[6]

CHEN GQ, 1990, 0052791 MSR

[7] NUMERICAL-SIMULATION OF NONSTATIONARY ELECTRON-TRANSPORT IN GUNN DEVICES IN A HARMONIC MODE OSCILLATOR CIRCUIT [J].

CUROW, M ;

HINTZ, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (09) :1983-1994

[8] Weak solutions to a one-dimensional hydrodynamic model of two carrier types for semiconductors [J].

Fang, WF ;

Ito, K .

NONLINEAR ANALYSIS-THEORY METHODS & APPLICATIONS, 1997, 28 (05) :947-963

[9] TRANSPORT EFFECTS AND CHARACTERISTIC MODES IN THE MODELING AND SIMULATION OF SUBMICRON DEVICES [J].

JEROME, JW ;

SHU, CW .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1995, 14 (08) :917-923

[10]

LEE CH, 1991, KLUWER INT SER ENG C, P169

← 1 2 →