Shock-induced transformation of Al2O3 and LiF into semiconducting liquids -: art. no. 035502

被引：93

作者：

Hicks, DG ^{[1
]}

Celliers, PM ^{[1
]}

Collins, GW ^{[1
]}

Eggert, JH ^{[1
]}

Moon, SJ ^{[1
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.91.035502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Shock compression of sapphire (Al2O3) and lithium fluoride (LiF) to pressures above 5 Mbar has been observed to transform these transparent, wide band-gap insulators into partially degenerate liquid semiconductors with optical reflectivities of several percent. Reflectivities rise steadily with shock pressure up to 45% in sapphire at 20 Mbar and 20% in LiF at 13 Mbar. Using a simple model, the electron scattering length was inferred to be approximately the interatomic distance. In addition, several equation-of-state points at these pressures were measured.

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