Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition

被引：241

作者：

Grill, A ^{[1
]}

Patel, V ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.1392976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal-insulator-silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. (C) 2001 American Institute of Physics.

引用

页码：803 / 805

页数：3