High rate deposition of silicon thin films by hot wire cell method for solar cell applications

被引：5

作者：

Konagai, M ^{[1
]}

Tsushima, T ^{[1
]}

Ide, Y ^{[1
]}

Asakusa, K ^{[1
]}

Fujisaki, T ^{[1
]}

Kim, MK ^{[1
]}

Wakita, Y ^{[1
]}

Yamada, A ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916001

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hot wire cell method has been newly developed and successfully applied to grow polycrystalline and amorphous Si thin films with relatively high growth rates of 0.4-2.0nm/s. It is found that polycrystalline Si films can be obtained at substrate temperatures of 175-400 degreesC without a hydrogen dilution when the filament temperature is 2000-2100 degreesC. Valency control has been carried out by using of PH3 and B2H6. Up to now, high conductivities of 13 S/cm and 4 S/cm have been achieved for n-type and p-type polycrystalline Si thin films, respectively. Polycrystalline Si and a-Si solar cells prepared with the deposition rates of 0.4-1.0nm/s showed the efficiencies of similar to1% and 4.3%, respectively. We found by SIMS analysis that the high concentration of O and C atoms is incorporated into the film which limits the present cell performances.

引用

页码：788 / 791

页数：4

共 4 条

[1] High deposition rate of polycrystalline silicon thin films prepared by hot wire cell method [J].